Method and system for performing readout utilizing a self reference scheme
US6870760B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 16, 2003 |
| Grant date | Mar 22, 2005 |
| Priority date | — |
| Expiry date | Oct 16, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for reading a magnetic memory including a plurality of magnetic elements is disclosed. The method and system include determining a first resistance of at least one of the plurality of magnetic elements. The method and system also include applying a disturb magnetic field to the magnetic element(s) and determining a second resistance of the magnetic element(s) while the disturb magnetic field is applied. The method and system further include comparing the first resistance to the second resistance. Consequently, the state(s) of the magnetic element(s) can be determined without the use of a separate reference element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.