In situ plasma process to remove fluorine residues from the interior surfaces of a CVD reactor
US6872323B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2001 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Nov 1, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In accordance with an embodiment of the present intention, a fluorine residue removing method includes: supplying an oxygen-containing gas and a hydrogen-containing gas into a CVD chamber; producing a plasma of a mixture of the oxygen-containing gas and the-hydrogen containing gas, so that the plasma reacts with the fluorine residue, exothermically generating water; and evacuating from the CVD chamber a product of the reaction between the plasma and the fluorine residue. For the hydrogen-containing gas, NH3 is often used, and for the oxygen-containing gas, N2O, O2, or air is used. Exemplary mixtures of the oxygen-containing and the hydrogen-containing gases include 70 mol % N2O/NH3, 50 mol % N2O/NH3, and 52 mol % O2/NH3. An inert gas, such as He, Ne, Ar, or Kr, can be optionally supplied into the chamber to stabilize the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.