Magnetic field sensor with augmented magnetoresistive sensing layer
US6872467B2 · kind B2 · utility
20Cited by
9References
34Claims
0Family size
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Key dates
| Filing date | Nov 10, 2003 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Nov 10, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/32
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A ferromagnetic thin-film based magnetic field sensor having a nonmagnetic intermediate layer with two major surfaces on opposite sides thereof upon one of which a magnetization reference layer is provided and upon the other there being provided a sensing layer. A spacer layer is provided on the sensing film to separate this sensing film from an augmenting film with the spacer layer being sufficiently thick so as to significantly reduce or eliminate topological coupling between the sensing and augmenting films, and to significantly randomize spin states of emerging electrons traversing therethrough.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.