NVE Corporation
46Patents
21Active
46Granted
60Portfolio score
Filing activity: Nov 12, 1999 → Nov 10, 2021 · 12 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6744086B2 | Current switched magnetoresistive memory cell | Electricity | 192 | Expired |
| US6777730B2 | Antiparallel magnetoresistive memory cells | Electricity | 141 | Expired |
| US6713195B2 | Magnetic devices using nanocomposite materials | Emerging Cross-Sectional Technologies | 126 | Expired |
| US7230844B2 | Thermomagnetically assisted spin-momentum-transfer switching memory | Physics | 53 | Expired |
| US6404191B2 | Read heads in planar monolithic integrated circuit chips | Physics | 53 | Expired |
| US6462541B1 | Uniform sense condition magnetic field sensor using differential magnetoresistance | Performing Operations; Transporting | 50 | Expired |
| US6963098B2 | Thermally operated switch control memory cell | Electricity | 47 | Expired |
| US6538921B2 | Circuit selection of magnetic memory cells and related cell structures | Physics | 45 | Expired |
| US6535416B1 | Magnetic memory coincident thermal pulse data storage | Electricity | 34 | Expired |
| US6743639B1 | Magnetizable bead detector | Physics | 32 | Expired |
| US6875621B2 | Magnetizable bead detector | Emerging Cross-Sectional Technologies | 28 | Expired |
| US7391091B2 | Magnetic particle flow detector | Emerging Cross-Sectional Technologies | 22 | Active |
| US7054114B2 | Two-axis magnetic field sensor | Emerging Cross-Sectional Technologies | 21 | Expired |
| US6872467B2 | Magnetic field sensor with augmented magnetoresistive sensing layer | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6583629B1 | Magnetic digital signal coupler monitor | Electricity | 17 | Expired |
| US7148531B2 | Magnetoresistive memory SOI cell | Electricity | 12 | Expired |
| US7609054B2 | Magnetic particle flow detector | Emerging Cross-Sectional Technologies | 12 | Active |
| US6349053B1 | Spin dependent tunneling memory | Physics | 11 | Expired |
| US7390584B2 | Spin dependent tunneling devices having reduced topological coupling | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7177178B2 | magnetic memory layers thermal pulse transitions | Electricity | 10 | Expired |
| US7468664B2 | Enclosure tamper detection and protection | Physics | 10 | Active |
| US8294577B2 | Stressed magnetoresistive tamper detection devices | Physics | 9 | Active |
| US7355822B2 | Superparamagnetic field sensing device | Emerging Cross-Sectional Technologies | 8 | Active |
| US7054118B2 | Superparamagnetic field sensing devices | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6674664B2 | Circuit selected joint magnetoresistive junction tunneling-giant magnetoresistive effects memory cells | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.