Measuring back-side voltage of an integrated circuit
US6872581B2 · kind B2 · utility
1Cited by
9References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2002 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Jul 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1305
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods for integrated circuit diagnosis, characterization or modification using a charged particle beam. In one implementation, the bulk silicon substrate of an integrated circuit is thinned to about 1 to 3 μm from the deepest well, a voltage is applied to a circuit element that is beneath the outer surface of the thinned substrate. The applied voltage induces an electrical potential on the outer surface, which is detected as a surface feature on the outer surface by its interaction with the charged particle beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.