Group III nitride compound semiconductor device
US6872965B2 · kind B2 · utility
9Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2001 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Dec 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
Abstract
An undercoat layer inclusive of a metal nitride layer is formed on a substrate. Group III nitride compound semiconductor layers are formed on the undercoat layer continuously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.