Method for producing a semiconductor device
US6873112B2 · kind B2 · utility
4Cited by
10References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2004 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Feb 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01Q7/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention provides a method, for processing a substrate. The substrate is placed in a chamber, where the chamber comprises a substrate holder within the chamber and a dielectric window forming a side of the chamber. A gas is provided into the chamber. An antenna is used to generate an azimuthally symmetric electric field. A substantially azimuthally symmetric plasma is formed from the gas using the azimuthally symmetric electric field. A substantially uniform process rate is produced across a surface of a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.