Method for programming and erasing an NROM cell
US6873550B2 · kind B2 · utility
10Cited by
104References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 7, 2003 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Aug 28, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nitride read only memory (NROM) cell can be programmed by applying a ramp voltage to the gate input, a constant voltage to one of the two source/drain regions, and a ground potential to the remaining source/drain region. In order to erase the NROM cell, a constant voltage is coupled to the gale input. A constant positive current is input to one of the source/drain regions. The remaining source/drain region is either allowed to float, is coupled to a ground potential, or is coupled to the first source/drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.