Andrei Mihnea
75Patents
18h-index
30Co-inventors
80Inventor score
Filing activity: Jul 22, 1996 → Aug 11, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5793079A | Single transistor non-volatile electrically alterable semiconductor memory device | Physics | 81 | Expired |
| US6426898B1 | Method of reducing trapped holes induced by erase operations in the tunnel oxide of flash memory cells | Physics | 59 | Expired |
| US6272047A | Flash memory cell | Physics | 56 | Expired |
| US8389971B2 | Memory cells having storage elements that share material layers with steering elements and methods of forming the same | Emerging Cross-Sectional Technologies | 43 | Active |
| US7212435B2 | Minimizing adjacent wordline disturb in a memory device | Physics | 38 | Expired |
| US6384447B2 | Flash memory cell for high efficiency programming | Physics | 36 | Expired |
| US8395942B2 | Junctionless TFT NAND flash memory | Electricity | 36 | Active |
| US8274130B2 | Punch-through diode steering element | Physics | 35 | Active |
| US8520425B2 | Resistive random access memory with low current operation | Physics | 32 | Active |
| US6684173B2 | System and method of testing non-volatile memory cells | Physics | 27 | Expired |
| US6493280B2 | Method of reducing trapped holes induced by erase operations in the tunnel oxide of flash memory cells | Physics | 26 | Expired |
| US6798699B2 | Flash memory device and method of erasing | Physics | 25 | Expired |
| US6449189B2 | Flash memory cell for high efficiency programming | Physics | 24 | Expired |
| US6445619B1 | Flash memory cell for high efficiency programming | Physics | 20 | Expired |
| US9099202B2 | 3D stacked non-volatile storage programming to conductive state | Electricity | 19 | Active |
| US6798694B2 | Method for reducing drain disturb in programming | Physics | 19 | Expired |
| US6795348B2 | Method and apparatus for erasing flash memory | Electricity | 19 | Expired |
| US7099220B2 | Methods for erasing flash memory | Electricity | 18 | Expired |
| US6563741B2 | Flash memory device and method of erasing | Physics | 16 | Expired |
| US7272039B2 | Minimizing adjacent wordline disturb in a memory device | Physics | 16 | Expired |
| US7068543B2 | Flash memory | Electricity | 15 | Expired |
| US7499325B2 | Flash memory device with improved erase operation | Physics | 11 | Active |
| US7257024B2 | Minimizing adjacent wordline disturb in a memory device | Physics | 10 | Expired |
| US6873550B2 | Method for programming and erasing an NROM cell | Physics | 10 | Expired |
| US7924623B2 | Method for memory cell erasure with a programming monitor of reference cells | Physics | 9 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.