Method to use a laser to perform the edge clean operation on a semiconductor wafer
US6874510B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2003 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Feb 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for performing the edge clean operation on a semiconductor wafer. A laser beam is used to accurately clean the edge of the wafer. The wafer is clamped concentrically to a chuck and rotated at a selectable speed, preferably in the range of 10 rpm to 1,000 rpm. A laser beam of variable power is directed onto toward the edge of the wafer at an oblique angle through a nozzle through which an inert purge gas is simultaneously passed. The laser beam removes unwanted deposits at the edge of the wafer and the gas is used to blow away the residue and prevent slag buildup on other parts of the wafer. The process is preferably carried out in an exhausted chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.