Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
US6875279B2 · kind B2 · utility
26Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2001 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Apr 22, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for forming at least a portion of an electronic device include a High Vacuum-Chemical Vapor Deposition (UHV-CVD) system and a Low Pressure-Chemical Vapor Deposition (LPCVD) system using a common reactor. The invention overcomes the problem of silicon containing wafers being dipped in HF acid prior to CVD processing, and the problem of surface passivation between processes in multiple CVD reactors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.