III group nitride based semiconductor element and method for manufacture thereof
US6875629B2 · kind B2 · utility
41Cited by
15References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2002 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Jun 3, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/918
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A separator layer of Ti is formed on an auxiliary substrate of sapphire or the like. An undercoat layer of TiN is formed on the separator layer. The undercoat layer is provided so that a Group III nitride compound semiconductor layer can be grown with good crystallinity on the undercoat layer. TiN is sprayed on the undercoat layer to form a thermal spray depositing layer. Then, the separator layer is chemically etched to reveal the undercoat layer. Then, a Group III nitride compound semiconductor layer is grown on a surface of the undercoat layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.