Patent · US Expired

Method for producing ferroelectric capacitors and integrated semiconductor memory chips

US6875652B2 · kind B2 · utility

0Cited by

8References

6Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Igor Kasko · Mennecy, FR
Matthias Kroenke · Dresden, DE
Thomas Mikolajick · Birkenfeld, DE

Key dates

Filing date	Aug 11, 2003
Grant date	Apr 5, 2005
Priority date	—
Expiry date	Aug 11, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH10B53/30
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for producing ferroelectric capacitors that are structured using the stack principle and that are used in integrated semiconductor memory chips. The individual capacitor modules have an oxygen barrier between a lower capacitor electrode and an electrically conductive plug. At a site where it is not covered by the corresponding oxygen barrier, an unstructured adhesive layer is oxidized by the oxygen arising during the tempering process of the ferroelectric and forms insulating segments at the site in such a way that the lower capacitor electrodes of the ferroelectric capacitors are electrically insulated from one another. This makes it possible to dispense with structuring the adhesive layer. Furthermore, the layer serves as a getter of oxygen and inhibits the diffusion of oxygen to the plug.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.