Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material
US6875664B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2002 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Jan 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an integrated circuit using an amorphous carbon hard mask involves providing an amorphous carbon material layer above a layer of conductive material and providing an anti-reflective coating (ARC) material layer above the amorphous carbon material. A transition region is formed intermediate the amorphous carbon material layer and the ARC material layer. The transition region has a concentration profile that provides a transition between the amorphous carbon material layer and the ARC material layer. A portion of the amorphous carbon material layer, the ARC material layer, and the transition region is removed to form a hard mask, and a feature is formed in the layer of conductive material according to the hard mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.