Methods for producing a highly doped electrode for a field effect transistor

US6875676B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Karsten Wieczorek · Dresden, DE
• Falk Graetsch · Dresden, DE
• Gunter Grasshoff · Radebeul, DE

Key dates

• Filing date: Feb 6, 2003
• Grant date: Apr 5, 2005
• Expiry date: Feb 6, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32155
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A highly localized diffusion barrier is incorporated into a polysilicon line to allow the doping of the polysilicon layer without sacrificing an underlying material layer. The diffusion barrier is formed by depositing a thin polysilicon layer and exposing the layer to a nitrogen-containing plasma ambient. Thereafter, the deposition is resumed to obtain the required final thickness. Moreover, a polysilicon line is disclosed, having a highly localized barrier layer.