Patent · US Expired

Method for determining the temperature of a memory cell from transistor threshold voltage

US6877897B2 · kind B2 · utility

2Cited by

5References

3Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jens Braun · Stuttgart, DE
Detlev Richter · Unterhaching, DE
Wolfgang Anton Spirkl · Germering, DE

Key dates

Filing date	Jan 30, 2002
Grant date	Apr 12, 2005
Priority date	—
Expiry date	Dec 26, 2022

Classification

Technology area (CPC G)Physics
CPC primaryG11C2029/5002
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The temperature of a semiconductor component is determined by way of a memory cell that includes a transistor and a capacitor. To that end, a signal is determined in dependence on a threshold voltage of the transistor and a value for the temperature of the transistor is determined in dependence on the signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.