Semiconductor device having a conductive layer with a cobalt tungsten phosphorus coating and a manufacturing method thereof
US6878632B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2001 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | May 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device capable of suppressing diffusion of copper at an interface between a copper wire and a cap film to enhance an electromigration resistance to ensure reliability of the copper wire, and a manufacturing method thereof are provided. The semiconductor device according to the present invention comprises an insulating film (12) formed on a substrate (11), a concave portion (13) (for example, a groove) formed in the insulating film, a conductive layer (15) embedded in the concave portion through a barrier layer (14), and a cobalt tungsten phosphorus coating (16) to connect with the barrier layer on the side of the conductive layer and to coat the conductive layer on the opening side of the concave portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.