Method for enhancing substrate processing
US6878636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2002 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Apr 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention generally provide a method for enhancing chemical reactions within a substrate processing chamber during a substrate processing sequence. The method generally includes supporting a substrate in a face up position on a substrate support member, providing a process gas into the processing chamber, and striking a plasma of the process gas. The method further includes imparting at least one impulse to the substrate support member that is substantially perpendicular to a substrate surface, the at least one impulse being of sufficient magnitude to agitate the substrate surface to expand an exposed surface area of the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.