Semiconductor device with joint structure having lead-free solder layer over nickel layer
US6879041B2 · kind B2 · utility
56Cited by
2References
5Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 26, 2003 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Mar 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/3463
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The impact strength resistance of a solder joint portion of a semiconductor device is improved. The semiconductor device has a joint structure wherein a jointing layer which does not contain sulfur substantially is arranged between an underlying conductive layer and a lead-free solder layer and further between the jointing layer and the lead-free solder layer is formed an alloy layer comprising elements of these layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.