CMOS imager with integrated non-volatile memory
US6879340B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 19, 1998 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Aug 19, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A CMOS imager and non-volatile memory are integrated on a single substrate along with logic and support circuitry for decoding and processing optical information received by the CMOS imager. A protective layer covers the non-volatile memory contained on the substrate for blocking light received by the CMOS imager. The protective layer can be a metal layer used as an interconnect over other areas of the substrate or an opaque layer provided during the fabrication process. Integrating a CMOS imager, non-volatile memory and peripheral circuitry for decoding and processing optical information received by the CMOS imager allows for a single chip image sensing device, such as a digital camera.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.