Magnetoresistive device and magnetic memory device
US6879473B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2003 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Jun 12, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3277
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics.A magnetoresistive effect element 1 has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to produce a magnetoresistive change by a current flowing to the direction perpendicular to the film plane, the magnetization free layer having a normalized resistance ranging from 2000 Ωnm2 to 10000 Ωnm2 where a product of a specific resistance obtained when a current flows to the film thickness direction of the magnetization free layer 7 and a film thickness is defined as the normalized resistance. A magnetic memory device includes this magnetoresistive effect element 1 and bit lines and word lines sandwiching the magnetoresistive effect element 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.