Magnetoresistive element and magnetic memory unit
US6879514B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2003 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Oct 17, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.