In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films
US6881259B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2000 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Jan 26, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/165
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Analysis of residual gases from a process for depositing a film containing silicon on a crystalline silicon surface to determine partial pressure of hydrogen evolved during deposition develops a signature which indicates temperature and/or concentration of germanium at the deposition surface. Calibration and collection of hydrogen partial pressure data at a rate which is high relative to film deposition rate allows real-time, in-situ, non-destructive determination of material concentration profile over the thickness of the film and/or monitoring the temperature of a silicon film deposition process with increased accuracy and resolution to provide films of a desired thickness with high accuracy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.