Process for direct deposition of ALD RhO2
US6881260B2 · kind B2 · utility
34Cited by
12References
80Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2002 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Jun 25, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/16
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides methods of performing atomic layer deposition to form conductive, oxidation-resistant rhodium oxide films and films comprising metals, such as platinum, alloyed with rhodium oxide. The present invention also provides memory devices and processors comprising films deposited by the above methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.