Optical proximity correction method utilizing ruled ladder bars as sub-resolution assist features
US6881523B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 13, 2002 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Oct 21, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithography mask for optically transferring a pattern formed in said mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, where each of the plurality of resolvable features has a longitudinal axis extending in a first direction; and a pair of non-resolvable optical proximity correction features disposed between two of the plurality of resolvable features, where the pair of non-resolvable optical proximity correction features has a longitudinal axis extending in a second direction, wherein the first direction of the longitudinal axis of the plurality of resolvable features is orthogonal to the second direction of the longitudinal axis of the pair of non-resolvable optical proximity correction features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.