Method of using scatterometry for analysis of electromigration, and structures for performing same
US6881594B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2002 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Apr 29, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/1721
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention is generally directed to various methods of using scatterometry for analysis of electromigration. In one illustrative embodiment, the method comprises forming a grating structure above a semiconducting substrate, the grating structure being comprised of a plurality of conductive structures, forcing an electrical current through at least one of the conductive structures and performing scatterometric measurements of at least one conductive structure to detect a change in shape of at least a portion of the conductive structure. In further embodiments, the method comprises determining a susceptibility of at least one conductive structure to electromigration based upon the detected change in shape of the conductive structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.