Depth of focus (DOF) for trench-first-via-last (TFVL) damascene processing with hard mask and low viscosity photoresist

US6881665B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Ting Tsui · Plano, US
• Stephen Keetai Park · Austin, US
• Christian Zistl · Dresden, DE

Key dates

• Filing date: Aug 9, 2000
• Grant date: Apr 19, 2005
• Expiry date: Jan 31, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76807
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is provided, the method comprising forming a dielectric layer above a structure layer, forming a hard mask layer above the dielectric layer, and forming at least one trench opening and at least one upper portion of a first via opening in the dielectric layer through the hard mask layer. The method also comprises forming a low viscosity photoresist layer above the at least one trench opening and the at least one upper portion of the first via opening in the dielectric layer.