Insulation film on semiconductor substrate and method for forming same
US6881683B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2002 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Apr 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.