Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber
US6884464B2 · kind B2 · utility
9Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2002 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Mar 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.