Two-step magnetic tunnel junction stack deposition
US6884630B2 · kind B2 · utility
7Cited by
7References
49Claims
0Family size
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Key dates
| Filing date | Jan 21, 2003 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Jan 21, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/951
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Magnetic tunnel junction devices can be fabricated using a two-step deposition process wherein respective portions of the magnetic tunnel junction stack are defined independently of one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.