Process for cleaving a wafer layer from a donor wafer

US6884697B2 · kind B2 · utility

Assignee

• S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES · FR

Inventors

• Walter Schwarzenbach · Saint-Nazaire-les-Eymes, FR
• Christophe Maleville · Bernin, FR

Key dates

• Filing date: Jan 14, 2003
• Grant date: Apr 26, 2005
• Expiry date: Jan 14, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76254
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to improvements in a process and annealing device for cleaving a wafer layer along a weakened zone in a donor wafer using a thermal anneal. In one improvement, at least one donor wafer is provided in a substantially horizontal position during the thermal anneal to prepare a wafer layer which, after detachment, has a cleaved surface with reduced surface roughness irregularities. The donor wafer can be preferably placed inside a chamber between two heating electrodes during the thermal anneal. The thermal anneal can be conducted to detach the wafer layer or the donor wafer to mechanical action to detach the wafer layer after the thermal anneal is conducted. Either way, a cleaved surface is provided on the detached wafer layer that does not include isolated dense areas adjacent the wafer layer periphery.