Use of amorphous carbon hard mask for gate patterning to eliminate requirement of poly re-oxidation
US6884733B1 · kind B1 · utility
41Cited by
22References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2002 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Aug 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28123
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing an integrated circuit eliminates the need to re-oxidize polysilicon gate conductors and lines prior to removal of a hard mask used to form the gate conductors. A layer of polysilicon is provided above a semiconductor substrate. The layer of polysilicon is then doped. A mask material comprising amorphous carbon is provided above the layer of polysilicon, and the layer of mask material is patterned to form a mask. A portion of the layer of polysilicon is removed according to the mask, and the mask is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.