Semiconductor integrated circuit device with internal power supply potential generation circuit
US6885235B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 12, 2002 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | May 11, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/147
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An internal power supply potential generation circuit includes an overcharge prevention circuit connected to an internal power supply node. The overcharge prevention circuit includes a circuit outputting a signal to be determined that is determined by an internal power supply potential, a differential amplification circuit amplifying a difference in potential between the signal to be determined and a reference potential for output to a node as a signal indicating that current should be drawn, and a current draw circuit drawing current from the internal power supply node in response to the signal indicating that current should be drawn. Thus the semiconductor integrated circuit device of interest can provide a steady internal power supply potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.