Patent · US Expired

Embossed mask lithography

US6887792B2 · kind B2 · utility

41Cited by
16References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 17, 2002
Grant dateMay 3, 2005
Priority date
Expiry dateFeb 8, 2023

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/942
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

Disclosed are layered groupings and methods for constructing digital circuitry, such as memory known as Permanent Inexpensive Rugged Memory (PIRM) cross point arrays which can be produced on flexible substrates by patterning and curing through the use of a transparent embossing tool.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.