Deposition methods

US6890596B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Demetrius Sarigiannis · Boise, US
• Garo Derderian · Boise, US
• Cem Basceri · Boise, US
• Gurtej S. Sandhu · Boise, US
• F. Daniel Gealy · Kuna, US
• Chris M. Carlson · Boise, US

Key dates

• Filing date: Aug 15, 2002
• Grant date: May 10, 2005
• Expiry date: Sep 23, 2022

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/455
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A deposition method includes positioning a substrate within a deposition chamber defined at least in part by chamber walls. At least one of the chamber walls comprises a chamber surface having a plurality of purge gas inlets to the chamber therein. A process gas is provided over the substrate effective to deposit a layer onto the substrate. During such providing, a material adheres to the chamber surface. Reactive purge gas is emitted to the deposition chamber from the purge gas inlets effective to form a reactive gas curtain over the chamber surface and away from the substrate, with such reactive gas reacting with such adhering material. Further implementations are contemplated.