Lithographic template and method of formation and use
US6890688B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 18, 2001 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Feb 6, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/093
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention relates to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10, 110, 210) is formed having a substrate (12, 112, 212) and a charge dissipation layer (20, 120, 220), and a patterned imageable relief layer, (16, 116, 216) formed on a surface (14, 114, 214) of the substrate (10, 110, 210) using radiation. The template (10, 110, 210) is used in the fabrication of a semiconductor device (344) for affecting a pattern in the device (344) by positioning (338) the template (10, 11, 210) in close proximity to semiconductor device (344) having a radiation sensitive material (334) formed thereon and applying a pressure (340) to cause the radiation sensitive material to flow into the relief image present on the template (10, 110, 210). Radiation (342) is then applied through the template (10, 110, 210) to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template (10, 110, 210) is then removed to complete fabrication of semiconductor device (344).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.