Dynamic random access memory trench capacitors
US6891209B2 · kind B2 · utility
11Cited by
22References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2002 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Aug 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
Abstract
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.