Transistor with workfunction-induced charge layer
US6891234B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2004 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Apr 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/671
Abstract
An electrical switching device includes a semiconductor having a channel therein which is proximate to at least on channel tap in an extension region and also to a gate. A conductor (e.g., a metal) is disposed proximate to the extension region but is electrically isolated from both the extension region and the gate (e.g., through the use of one or more insulators). The conductor has a workfunction outside of the bandgap of a semiconductor in the extension region and therefore includes a layer of charge in the extension region. The magnitude and polarity of this layer of charge is controlled through selection of the metal, the semiconductor, and the insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.