Patent assignee · US · COMPANY

ACORN TECHNOLOGIES, INC.

78Patents
60Active
78Granted
53Portfolio score

Filing activity: Oct 25, 1994 → May 16, 2018 · 22 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US5961582A Distributed and portable execution environment Physics 162 Expired
US6891234B1 Transistor with workfunction-induced charge layer Electricity 157 Expired
US7112478B2 Insulated gate field effect transistor having passivated Schottky barriers to the channel Emerging Cross-Sectional Technologies 77 Expired
US6198113A Electrostatically operated tunneling transistor Emerging Cross-Sectional Technologies 56 Expired
US7176483B2 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions Electricity 54 Expired
US7084423B2 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions Electricity 49 Expired
US7700416B1 Tensile strained semiconductor on insulator using elastic edge relaxation and a sacrificial stressor layer Emerging Cross-Sectional Technologies 35 Active
US6594103B1 Read channel generating absolute value servo signal Physics 35 Expired
US6545836B1 Servo control apparatus and method using absolute value input signals Physics 30 Expired
US7382021B2 Insulated gate field-effect transistor having III-VI source/drain layer(s) Electricity 25 Expired
US6833556B2 Insulated gate field effect transistor having passivated schottky barriers to the channel Emerging Cross-Sectional Technologies 23 Expired
US7884003B2 Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions Electricity 23 Active
US7462860B2 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions Electricity 21 Expired
US8212336B2 Field effect transistor source or drain with a multi-facet surface Electricity 21 Active
US7338834B2 Strained silicon with elastic edge relaxation Electricity 20 Active
US9209261B2 Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions Electricity 20 Active
US8731017B2 Tensile strained semiconductor photon emission and detection devices and integrated photonics system Electricity 19 Active
US7883980B2 Insulated gate field effect transistor having passivated schottky barriers to the channel Emerging Cross-Sectional Technologies 18 Active
US9425277B2 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions Electricity 16 Active
US8263467B2 Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor Electricity 16 Active
US9461167B2 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions Electricity 15 Active
US6381088B1 Apparatus for developing a dynamic servo signal from data in a magnetic disc drive and method Physics 15 Expired
US8658523B2 Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s) Electricity 15 Active
US9905691B2 Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions Electricity 15 Active
US10090395B2 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions Electricity 15 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.