Patent · US Expired

Memory configuration and method for reading a state from and storing a state in a ferroelectric transistor

US6894330B2 · kind B2 · utility

4Cited by

4References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Harald Bachhofer · Hersbruck, DE
Georg Braun · Hersbruck, DE
Thomas Haneder · Hersbruck, DE
Wolfgang Hönlein · Unterhaching, DE
Marc Ullmann · Hamburg, DE

Key dates

Filing date	Feb 14, 2001
Grant date	May 17, 2005
Priority date	—
Expiry date	Jan 12, 2022

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/22
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The state of a ferroelectric transistor in a memory cell is read or stored, and the threshold voltage of further ferroelectric transistors in further memory cells in the memory matrix is increased during the reading or storing, or is increased permanently. A memory configuration including ferroelectric memory cells is also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.