Methods of forming a transistor having a recessed gate electrode structure

US6897114B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Christian Krueger · Stuttgart, DE
• Thomas Feudel · Radebeul, DE
• Volker Grimm · Neustadt an der Donau, DE

Key dates

• Filing date: Jun 30, 2003
• Grant date: May 24, 2005
• Expiry date: Jun 30, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/668

Abstract

In manufacturing a recessed gate transistor, a channel implantation and a source/drain implantation are performed by means of a single implantation mask prior to the formation of a gate opening. Thereafter, the gate opening is formed to a depth that extends substantially to the channel implant so that raised drain and source regions are created which are substantially even with the gate electrode formed in the gate opening. Consequently, expensive and complex epitaxial growth steps can be avoided.