Group III nitride compound semiconductor device
US6897139B2 · kind B2 · utility
40Cited by
22References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 18, 2001 |
| Grant date | May 24, 2005 |
| Priority date | — |
| Expiry date | Jul 18, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/918
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A titanium layer and a titanium nitride layer are successively laminated on a substrate and a group III nitride compound semiconductor layer is further formed thereon. When the titanium layer is removed in the condition that a sufficient film thickness is given to the titanium nitride layer, a device having the titanium nitride layer as a substrate is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.