Avoiding shorting in capacitors
US6897501B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2003 |
| Grant date | May 24, 2005 |
| Priority date | — |
| Expiry date | Feb 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
Abstract
A capacitor structure having a capacitor with a top electrode, a bottom electrode, and a capacitor dielectric layer between the top and bottom electrodes is disclosed. The capacitor includes upper and lower portions. The demarcation between the upper and lower portion is located between top and bottom surfaces of the capacitor dielectric layer. A dielectric layer is provided on the sidewalls of the upper portion of the capacitor to prevent shorting between the electrodes that can be caused by a conductive fence formed during processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.