Chemical mechanical polishing (CMP) process using fixed abrasive pads
US6899597B2 · kind B2 · utility
1Cited by
10References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2003 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Jan 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductive wafer having a layer of conductive material formed thereon is polished. The semiconductor wafer is rotated against an abrasive polishing pad. A solution is applied to the semiconductor wafer and to the abrasive polishing pad. The solution includes an etchant of the conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.