Method for forming a region of low dielectric constant nanoporous material using a microemulsion technique

US6899857B2 · kind B2 · utility

Assignee

• Chartered Semiconductors Manufactured Limited · SG

Inventors

• Soo Choi Pheng · Haag in Oberbayern, DE
• Lap Chan · San Francisco, US
• Wang Cui Yang · Singapore, SG
• Siew Yong Kong · Kassaro, ML
• Alex See · Singapore, SG

Key dates

• Filing date: Nov 13, 2001
• Grant date: May 31, 2005
• Expiry date: Nov 13, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02282
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a region of low dielectric constant nanoporous material is disclosed. In one embodiment, the present method includes the step of preparing a microemulsion. The method of the present embodiment then recites applying the microemulsion to a surface above which it is desired to form a region of low dielectric constant nanoporous material. Next, the present method recites subjecting the microemulsion, which has been applied to the surface, to a thermal process such that the region of low dielectric constant nanoporous material is formed above the surface.