Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
US6900067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2002 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Oct 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a light emitting device includes providing a sapphire substrate, growing an Al1−xGaxN first layer by vapor deposition on the substrate at a temperature between about 1000° C. and about 1180° C., and growing a III-nitride second layer overlying the first layer. The first layer may have a thickness between about 500 angstroms and about 5000 angstroms. In some embodiments, reaction between the group V precursor and the substrate is reduced by starting with a low molar ratio of group V precursor to group III precursor, then increasing the ratio during growth of the first layer, or by using nitrogen as an ambient gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.