Method of selective removal of SiGe alloys
US6900094B2 · kind B2 · utility
96Cited by
44References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2002 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Jun 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
Abstract
A method is disclosed of forming buried channel devices and surface channel devices on a heterostructure semiconductor substrate. In an embodiment, the method includes the steps of providing a structure including a first layer having a first oxidation rate disposed over a second layer having a second oxidation rate wherein the first oxidation rate is greater than the second oxidation rate, reacting said first layer to form a sacrificial layer, and removing said sacrificial layer to expose said second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.