Method of forming a thin oxide layer having improved reliability on a semiconductor surface

US6900111B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Karsten Wieczorek · Dresden, DE
• Stephan Krügel · Fürth, DE
• Falk Graetsch · Dresden, DE

Key dates

• Filing date: Apr 19, 2002
• Grant date: May 31, 2005
• Expiry date: Apr 19, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/966
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a reliable and ultra-thin oxide layer, such as a gate oxide layer of an MOS transistor, comprises an annealing step immediately performed prior to oxidizing a substrate. The annealing step is performed in an inert gas ambient to avoid oxidation of the semiconductor surface prior to achieving a required low oxidizing temperature. Preferably, the annealing step and the oxidizing step are carried out as an in situ process, thereby minimizing the thermal budget of the overall process.