Deposition over mixed substrates
US6900115B2 · kind B2 · utility
70Cited by
46References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 11, 2002 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Feb 21, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Chemical vapor deposition methods are used to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. An example is in forming the base region of a heterojunction bipolar transistor, including simultaneous deposition over both single crystal semiconductor surfaces and amorphous insulating regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.