Method of forming refractory metal contact in an opening, and resulting structure

US6900505B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jonanthan D. Chapple-Sokol · South Burlington, US
• Randy W. Mann · Jericho, US
• William J. Murphy · North Ferrisburgh, US
• Jed H. Rankin · South Burlington, US
• Daniel S. Vanslette · South Burlington, US

Key dates

• Filing date: Apr 19, 2004
• Grant date: May 31, 2005
• Expiry date: Apr 19, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/12
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A structure which ensures against deterioration of an underlying silicide layer over which a refractory material layer is deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is realized by first providing a continuous polysilicon layer prior to the refractory material deposition. The continuous polysilicon layer, preferably no thicker than 50 Å, serves a sacrificial purpose and prevents damage to an underlying silicide layer by blocking interaction between any fluorine and the underlying silicide that is released when the refractory material is formed.